13003a transistor datasheet booklet

Pricing and availability on millions of electronic components from digikey. Electrical ratings st03, st03k 210 docid533 rev 5 1 electrical ratings table 2. Performance is based on target specifications, simulated results, andor prototype measurements. La733p amplifier transistors pnp silicon maximum ratings rating symbol value unit collectoremitter voltage vceo 48 vdc collectorbase voltage vcbo 60 vdc emitterbase voltage vebo 5. Normalized total power dissipation as a function of heatsink temperature vclce v 0 800200 400 600 003aad544 4 2 6 8 ic a 0 vbe. Suitable for lighting, switching regulator and motor control absolute maximum ratings description symbol value vcbo 600 collector base voltage vceo 400 collector emitter sus voltage vebo 9. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. International in the assembly line c assembled on ww 19, 2001 lot code 1789 logo line c part number date code week 19 year 1 2001 this is a mbr1045 part marking information. Electrical specifications ta 25oc unless otherwise noted. Nchannel enhancement mode mosfet description applications the spn3055 is the nchannel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology.

Emt1 umt1n imt1a general purpose transistor dual transistors datasheet loutline parameter tr1 and tr2 emt6 umt6 vceo50v ic150ma emt1 umt1n sc107c sot363 smt6 lfeatures 1two 2sa1037ak chips in a emt, umt or smt package. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. Toshiba transistor silicon npn epitaxial type 2sc2878. There are various industry standard chips in modified 8dil package usually one or more pins are absent so the pin with the flyback pulses on it have more isolation from the. Mar 22, 2017 that chip includes all the smpsu regulator circuitry a transistor doesnt. Alj03 cj jx discrete semiconductors jotrin electronics. Npn epitaxial planar silicon transistor 25v 2a highhfe, low frequency generalpurpose amplifier applications. Sbn02d sbn02d sbn02d sbn02d highvoltagefastswitchingnpnpowertransistor features symbol symbol symbol symbol 2. Main power in my neighborhood not stabile so i need use zenner diode voltage regulator, connect regulated volt to base of power transistor 40411 to make high power volt regulator.

Kse03as datasheet, kse03as pdf, kse03as data sheet, datasheet, data sheet, pdf, fairchild semiconductor, npn silicon transistor. The main parameters of the transistor mje03 and 03. Contains pinouts for connectors and information about how to build cables etc. Data sheets contain information regarding a product macom technology solutions is considering for development. High voltage capability,suitable switching speed,wide safety operating area. Emitter built in freewheeling diode general description this device is designed for high voltage, high speed. Package demensions 2000 fairchild semiconductor international rev. High voltage fastswitching npn power transistor stmicroelectronics. Pricing and availability on millions of electronic components from digikey electronics. T ordering information ordering number package pin assignment packing lead free halogenfree 1 2 3 mje03lxta3t mje03gxta3t to220 b c e tube. Emitter built in freewheeling diode general description this device is designed for high voltage, high speed switching.

This high density process is especially tailored to minimize onstate resistance. Buy them on the market 80% is fake or chinese clone. Active transistor power dissipation junction temperature above case temperature 105acw 150 mw 16a, 52. At high case temperatures, thermal limitations will reduce. To92, to126 and to220 are the main packaging type which can satisfy various kinds of needs. Vce limits of the transistor that must be observed for reliable operation. Test circuit for reverse bias safe operating area fig 3. Apt03d features mechanical data diodes incorporated. Transistor i will get them from old japan electric machine or receiver from my friends in foreign countries. Vcbo600v, npn transistor, view the manufacturer, and stock, and datasheet pdf for the alj03 at jotrin electronics. Comply with the requirement of rohs compliant directive. Specifications may change in any manner without notice. Npn silicon power transistor, 03l pdf download unisonic technologies, 03l datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits electronic component search and free download site.

Transistor equivalent page 6 electronics forum circuits. Igmopnrq mje03 e03 03 03a transistor a92 to92 por triodo unidspack shenzhen hengjiexin electronics co. B75 datasheet audio frequency power amplifier toshiba. The utc 03ada is a silicon npn power switching transistor. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. How to determine the pinout of a damaged transistor 03. Absolute maximum ratings symbol parameter value unit vces collectoremitter voltage vbe 0 700 v vceo collectoremitter voltage ib 0 400 v vebo emitterbase voltage ic 0, ib 0. S je 03 02 and 03 power transistor tr 03 transistor. Jan 12, 2016 b75 datasheet audio frequency power amplifier toshiba, 2sb75 datasheet, b75 pdf, b75 pinout, b75 equivalent, data, circuit, b75 schematic. St03, st03k high voltage fastswitching npn power transistor datasheet production data, table 5. The transistor is subdivided into three groups, o, y and s, according to its dc current gain.

Collector very high switching speed high voltage capability 1. Unisonic technologies, 03bs, npn silicon bipolar transistors for. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation sot89 pc 550 mw to92 750. Various options for the pinouts of the transistors 03 and mje03. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. Our main production is 03 series transistor which are widely used in energysaving lamps and electronic ballast, transformers, and chargers etc. Power integrations do a range of 3terminal switchers, but theyre mostly to220 package. A, february 2000 bd579 dimensions in millimeters 8. Diodes and transistors pdf 28p this note covers the following topics.