St 2sa933 pnp silicon epitaxial planar transistor for switching and af amplifier applications. Active transistor power dissipation junction temperature above case temperature 105acw 150 mw 16a, 52. T ordering information ordering number package pin assignment packing lead free halogenfree 1 2 3 mje03lxta3t mje03gxta3t to220 b c e tube. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. Alj03 cj jx discrete semiconductors jotrin electronics. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Main power in my neighborhood not stabile so i need use zenner diode voltage regulator, connect regulated volt to base of power transistor 40411 to make high power volt regulator. Our main production is 03 series transistor which are widely used in energysaving lamps and electronic ballast, transformers, and chargers etc. Pricing and availability on millions of electronic components from digikey electronics. Npn epitaxial planar silicon transistor 25v 2a highhfe, low frequency generalpurpose amplifier applications. Suitable for lighting, switching regulator and motor control absolute maximum ratings description symbol value vcbo 600 collector base voltage vceo 400 collector emitter sus voltage vebo 9.
Igmopnrq mje03 e03 03 03a transistor a92 to92 por triodo unidspack shenzhen hengjiexin electronics co. Package demensions 2000 fairchild semiconductor international rev. As complementary type the npn transistor st 2sc945 is recommended. Power integrations do a range of 3terminal switchers, but theyre mostly to220 package. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. International in the assembly line c assembled on ww 19, 2001 lot code 1789 logo line c part number date code week 19 year 1 2001 this is a mbr1045 part marking information. Specifications may change in any manner without notice. St03, st03k high voltage fastswitching npn power transistor datasheet production data, table 5. Npn silicon power transistor, 03l pdf download unisonic technologies, 03l datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits electronic component search and free download site.
The main parameters of the transistor mje03 and 03. Test circuit for reverse bias safe operating area fig 3. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. S je 03 02 and 03 power transistor tr 03 transistor. High voltage capability,suitable switching speed,wide safety operating area. Absolute maximum ratings symbol parameter value unit vces collectoremitter voltage vbe 0 700 v vceo collectoremitter voltage ib 0 400 v vebo emitterbase voltage ic 0, ib 0. Collector very high switching speed high voltage capability 1. Emitter built in freewheeling diode general description this device is designed for high voltage, high speed. Comply with the requirement of rohs compliant directive. High voltage fastswitching npn power transistor stmicroelectronics.
Jan 12, 2016 b75 datasheet audio frequency power amplifier toshiba, 2sb75 datasheet, b75 pdf, b75 pinout, b75 equivalent, data, circuit, b75 schematic. To92, to126 and to220 are the main packaging type which can satisfy various kinds of needs. Transistor equivalent page 6 electronics forum circuits. Description the utc 03ada is a silicon npn power switching transistor. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation sot89 pc 550 mw to92 750. This high density process is especially tailored to minimize onstate resistance.
Pricing and availability on millions of electronic components from digikey. B75 datasheet audio frequency power amplifier toshiba. Kse03as datasheet, kse03as pdf, kse03as data sheet, datasheet, data sheet, pdf, fairchild semiconductor, npn silicon transistor. Vce limits of the transistor that must be observed for reliable operation. Performance is based on target specifications, simulated results, andor prototype measurements. A, february 2000 bd579 dimensions in millimeters 8. Emt1 umt1n imt1a general purpose transistor dual transistors datasheet loutline parameter tr1 and tr2 emt6 umt6 vceo50v ic150ma emt1 umt1n sc107c sot363 smt6 lfeatures 1two 2sa1037ak chips in a emt, umt or smt package. Unisonic technologies, 03bs, npn silicon bipolar transistors for. The utc 03ada is a silicon npn power switching transistor. How to determine the pinout of a damaged transistor 03.
Apt03d features mechanical data diodes incorporated. Electrical specifications ta 25oc unless otherwise noted. Buy them on the market 80% is fake or chinese clone. Toshiba transistor silicon npn epitaxial type 2sc2878. La733p amplifier transistors pnp silicon maximum ratings rating symbol value unit collectoremitter voltage vceo 48 vdc collectorbase voltage vcbo 60 vdc emitterbase voltage vebo 5. Mar 22, 2017 that chip includes all the smpsu regulator circuitry a transistor doesnt. Vcbo600v, npn transistor, view the manufacturer, and stock, and datasheet pdf for the alj03 at jotrin electronics.
Contains pinouts for connectors and information about how to build cables etc. Transistor i will get them from old japan electric machine or receiver from my friends in foreign countries. Electrical ratings st03, st03k 210 docid533 rev 5 1 electrical ratings table 2. Data sheets contain information regarding a product macom technology solutions is considering for development. Various options for the pinouts of the transistors 03 and mje03. Normalized total power dissipation as a function of heatsink temperature vclce v 0 800200 400 600 003aad544 4 2 6 8 ic a 0 vbe. Sbn02d sbn02d sbn02d sbn02d highvoltagefastswitchingnpnpowertransistor features symbol symbol symbol symbol 2. Nchannel enhancement mode mosfet description applications the spn3055 is the nchannel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. At high case temperatures, thermal limitations will reduce. Diodes and transistors pdf 28p this note covers the following topics. The transistor is subdivided into three groups, o, y and s, according to its dc current gain. Emitter built in freewheeling diode general description this device is designed for high voltage, high speed switching. There are various industry standard chips in modified 8dil package usually one or more pins are absent so the pin with the flyback pulses on it have more isolation from the.
902 571 166 398 844 300 316 1287 328 927 1033 677 715 1105 467 20 1064 428 501 833 1567 483 856 427 431 1184 786 439 1105 1393 914 1267 1345 368 56 227